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Nanoelectromechanical Memories and Switches

Nanoelectromechanical switches (NEMS) exhibit minimal leakage current in the off state. Consequently, they may find application in low power electronics.  This work focuses on the fabrication of a vertically oriented nano-switch using a carbon fiber or nanotube as the active component.  The device schematic is shown in Figure 1, and Figure 2 shows an SEM image of the self-aligned fabrication process used to create the nano-switch [1].  The device consists of a carbon nanotube/fiber grown directly on a highly doped silicon substrate between two contacts which are electrically isolated from the substrate by an insulator.  The device is actuated when a voltage is applied between the substrate and one of the contacts.  This causes the nanotube to be pulled into and eventually make physical contact with one of the contacts and allows current flow between the substrate and the contact.

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